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Page 1002
Speed of Charges in Different Materials ( cm2 / V - s ) Ino.53 Ga0.47As 10,000 Charges Electrons * 15,000 30,000 Holes * 460 1250 * Electron carrier mobilities measured in transistor channels with electron concentration of 1x1012 cm - 2 ...
Speed of Charges in Different Materials ( cm2 / V - s ) Ino.53 Ga0.47As 10,000 Charges Electrons * 15,000 30,000 Holes * 460 1250 * Electron carrier mobilities measured in transistor channels with electron concentration of 1x1012 cm - 2 ...
Page 1019
For example , the observation of the quantum Hall effect , which requires precise interfacial engineering in semiconducting materials , was recently reported for an oxid interface ( 6 ) . The properties of an interface region between ...
For example , the observation of the quantum Hall effect , which requires precise interfacial engineering in semiconducting materials , was recently reported for an oxid interface ( 6 ) . The properties of an interface region between ...
Page 1123
... For additional information , visit the MRS Web site at www.mrs.org/meetings/ or contact : MRS Member Services Materials Research Society 506 Keystone Drive Warrendale , PA 15086-7573 Tel 724-779-3003 Fax 724-779-8313 ...
... For additional information , visit the MRS Web site at www.mrs.org/meetings/ or contact : MRS Member Services Materials Research Society 506 Keystone Drive Warrendale , PA 15086-7573 Tel 724-779-3003 Fax 724-779-8313 ...
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Contents
Beyond the Stimulus | 983 |
Learn more | 987 |
NEWS OF THE WEEK | 992 |
Copyright | |
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Bibliographic information
| Title | Science, Volume 323, Issues 5917-5922 Science, American Association for the Advancement of Science |
| Contributor | American Association for the Advancement of Science |
| Publisher | American Association for the Advancement of Science, 2009 |
| Original from | the University of California |
| Digitized | 30 Jan 2020 |
| Export Citation | BiBTeX EndNote RefMan |